Victor Ryzhii, Professor
Fellow of the Inst. of Electrical and Electronics Engineers (IEEE)
Fellow of the American Physical Society (APS)
Corresponding Member of the Russian Academy of Sciences (RAS)

Research Interests:

Physics and computer modeling of heterostructures and heterostructure electronic and optoelectronic devices:

• two-dimensional electron systems (plasma effects, absolute negative conductivity, etc.)
• Heterostructure detectors and sources of terahertz radiation including those utilizing plasma instabilities and photomixing
• Quantum-well and quantum-dot infrared photodetectors and other optoelectronic devices

Recent Articles in refereed journals

  2009  

    * V.Ryzhii and M.Ryzhii.
      "Graphene bilayer field-effect phototransistor for terahertz and infrared detection",
      Phys. Rev. B 79, in press (2009)
    * V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and N. Kirova.
      "Device model for graphene bilayer field-effect transistor",
      J. Appl. Phys. 105, pp. 104510 1-9 (2009)
    * V.Ryzhii, M.Ryzhii, V.Mitin, and M.S.Shur.
      "Graphene tunneling transit-time terahertz oscillator based on electrically induced p-i-n junction",
      Appl. Phys. Express 2, 034503 (2009)
    * V.Ryzhii, M.Ryzhii, N.Ryabova, V.Mitin, and T.Otsuji.
      "Graphene nanoribbon phototransistor: proposal and analysis",
      Jpn. J. Appl. Phys. 48, pp. 04C144 (2009)
    * O.G.Balev, F.T.Vasko, and V.Ryzhii.
      "Carrier heating in intrinsic graphene by a strong dc electric field",
      Phys. Rev. B 79, pp. 165432 1-8 (2009).
    * V.Ya.Aleshkin, A.A.Dubinov, and V.Ryzhii.
      "Terahertz laser based on optically pumped graphene: model and feasibility of realization",
      JETP Lett. 89, pp. 63-67 (2009).

  2008  

    * M.Ryzhii, A.Satou, V.Ryzhii, and T.Otsuji.
      "High-frequency properties of graphene nanoribbon field-effect transistor",
      J. Appl. Phys. 104, pp. 114505 (2008).
    * V.Ryzhii, A.Satou, M.Ryzhii, T.Otsuji, and M.S.Shur.
      "Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gated electron channels,"
      J. Phys.: Condens. Matter 20, pp. 384207 (2008).
    * A.A.Ivanov, V.I.Ryzhii, E.A.Vostrikova, V.M.Chechetkin, and A.M.Oparin.
      "Model of terahertz radiation source on the base of field-effect transistor",
      Radioengineering and Electronics, 53, pp. 1 (2008) /in Russian/.
    * A.Satou, F.T.Vasko, and V.Ryzhii.
      "Nonequilibrium carriers in intrinsic graphene under interband photoexcitation",
      Phys. Rev. B 78, pp. 115431 (2008).
    * V.Vyurkov and V.Ryzhii.
      "Effect of Coulomb scattering on graphene conductivity",
      JEPT Lett. 88, pp.370 (2008).
    * V.Ryzhii, V.Mitin, M.Ryzhii, N.Ryabova, and T.Otsuji.
      "Device model for graphene nanoribbon phototransistor",
      Appl. Phy. Express vol. 1, pp. 063002 (2008).
    * V.G.Leiman, M.Ryzhii, A.Satou, N.Ryabova, V.Ryzhii, T.Otsuji, and M.S.Shur.
      "Analysis of resonant detection of terahertz radiation in high-electron mobility transistor with nanostring/carbon nanotube as the mechanically floating gate",
      J. Appl. Phys. 104, pp. 024514 1-7 (2008).
    * M.Ryzhii and V.Ryzhii (Editors).
      "Physics and Modeling of Tera and Nano-Devices",
      World Scientific Publishing, ISBN 978-981-277-904-5 (2008)
    * V.Ryzhii, M.Ryzhii, and T.Otsuji.
      "Thermionic and tunneling transport mechanisms in graphene field-effect transistors",
      Phys. Stat. Sol (a) 205, pp.1527 (2008).
    * F.Vasko and V.Ryzhii.
      "Photoconductivity of an intrinsic graphene",
      Phys. Rev. B 77, pp. 195433 1-8 (2008).
    * V.Ryzhii, M.Ryzhii, A.Satou, and T.Otsuji.
      "Current-voltage characteristics of a graphene nanoribbon field-effect transistor",
      J. Appl. Phys. 103, pp. 094510 1-8 (2008).
    * V.Vyurkov and V.Ryzhii.
      "Why graphene conductivity is constant: scaling theory consideration",
      LANL preprint arXiv:0803.3926 (2008).
    * V.Ryzhii, A.Satou,T. Otsuji, and M.S.Shur.
      "Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates",
      J. Appl. Phys. 103, pp.014504 1-6 (2008).
    * V.Ryzhii, M.Ryzhii, and T.Otsuji.
      "Tunneling current-voltage characteristics of graphene field-effect transistor",
      Appl. Phys. Exp. 1, pp. 013001 1-3 (2008).
    * Y.Hu, M.Ryzhii, I.Hagiwara, M.S.Shur, and V.Ryzhii.
      "Combined resonance and resonant detection of modulated terahertz radiation in a micromachined high-electron mobility transistor",
      Phys. Stat. Sol. (c) 5, pp.277- (2008).
    * V.Ryzhii, M.Ryzhii, and T.Otsuji.
      "Population inversion of phoexcited electrons and holes in graphene and its negative terahertz conductivity",
      Phys. Stat. Sol. (c) 5, pp.261- (2008).
    * I.Semenikhin, V.Ryzhii, E.Vostrikova, and A.Ivanov.
      "Electrical excitation of shock and soliton-like waves in high-electron-mobility transistor structures",
      Phys. Stat. Sol. (c) 5, pp.61- (2008).
    * M.Ryzhii, V.Ryzhii, Y.Hu, I.Hagiwara, and M.S.Shur.
      "Electromechanical and plasma resonances in two-dimensional electron systems with mechanically floating gates",
      Proceedings of SPIE, 6840, pp.68400L 1-12 (2008).