YOON Soon Fatt
Professor of School of Electrical & Electronic Engineering
Division of Microelectronics
Nanyang Technological University, Singapore

Biography

Prof Yoon received his B.Eng and Ph.D degrees in Electrical Engineering (Physical Electronics) from the University of Wales in Cardiff, United Kingdom in 1983 and 1986, respectively. He joined the Nanyang Technological University (then Nanyang Technological Institute) as a faculty member in 1989, where he is now Full Professor (Solid State Electronics and Photonics). Prior to joining Nanyang Technological University, he has worked as Research Engineer at ST Microelectronics, Italy and Research Associate at Standard Telecommunication Labs at Harlow, United Kingdom. In Nanyang Technological University, he directs the Compound Semiconductor & Quantum Information (CSQI) Group which presently comprises more than 20 research students and research staff. Supported by a laboratory with state of the art facilities in materials growth using molecular beam epitaxy, device fabrication and characterization, the CSQI Group is one of the largest in the School of Electrical & Electronic Engineering with key expertise in compound semiconductor materials, physics and device technology. The CSQI Group is presently supporting a number of major research projects totalling around $10M. Prof Yoon was Vice-Dean (Research) in the School of Electrical & Electronic Engineering from 1999-2005. He was a Board Member of the Institute of Microelectronics Singapore from 1997-2001 and was Vice President of the Materials Research Society ( Singapore). He Chairs a number of key committees at the Agency for Science, Technology and Research (A*STAR); including the Public Sector R&D funding committee and Semiconductor Technology Scan committee as part of A*STAR’s 2010 Science and Technology Plan. He is an Editorial Board member of the newly launched Nanoscale Research Letters (Springer), Microelectronics Journal (Elsevier) and Associate Editor of the European Journal of Applied Physics. He has published and presented more than 500 papers in international peer-reviewed journals and international conferences in the compound semiconductor, thin films and solid state photonics and RF device areas. He holds two patents in thin film and nano-imprint technology. As Fellow of two programs (Advanced Materials for Micro- and Nano-systems and Manufacturing Systems Technology) under the Singapore-MIT Alliance Program, he has extensive collaborations with MIT, as well as a number of key institutions in US, Japan and Europe (under the European Commission Research Framework).

Research Interest

• Compound semiconductors (particularly nitrides and antimonides).
• Molecular beam epitaxy.
• Nanophotonics and nanoelectronics: materials, physics and devices.
• Heterogeneous integration of compound semiconductors with silicon-based technology.
• Microwave photonics: materials, physics and devices.
• Quantum dot photonics for integrated nano-systems.
• Low dimensional systems for spintronics and plasmonics systems.
• Systems for biological/photonic interfaces.

  Selected Research Projects

Development of nitrogen-containing compound semiconductors for quantum dot photonics and nanoelectronics (A*STAR and MOE).
Dilute nitrides for microwave photonics (European Commission Research Framework).
Integrated nano-photonics and lattice-mismatched systems (Singapore-MIT Alliance).

 

Selected Publications

W.K.Loke, S.F.Yoon, S.Z.Wang, T.K.Ng and W.J.Fan, “Rapid thermal annealing of GaNxAs1-x grown by radio frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence”, Journal of Applied Physics, Vol.91, No.8, April 2002, pp.4900-4903.
K.H.Tan, S.F.Yoon, Q.F.Huang, R.Zhang, Z.Z.Sun, J.Jiang, W.Feng and L.H.Lee, “Investigation of dicarbon defects in carbon-doped GaAs”, Physical Review B, Vol.67, 2003, pp.035208-1 to 035208-5.
C.Y.Liu, S.F.Yoon, S.Z.Wang, W.J.Fan, Y.Qu and S.Yuan, “Fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation”, IEEE Photonics Technology Letters, Vol.16, No.11, Nov 2004, pp.2409-2411.
S.Y.Xie, S.F.Yoon and S.Z.Wang, “Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN”, Journal of Applied Physics, Vol. 97(7), Apr 2005, No. 073702.
C.Y.Liu, S.F.Yoon, Z.Z.Sun and K.C.Yew, “High-temperature operation of self-assembled GaInNAs/GaAsN quantum-dot lasers grown by solid source molecular beam epitaxy”, Applied Physics Letters, Vol.88, p.081105, 2006.