Education
    * Department of Electronics, Faculty of Engineering, Kyushu Institute of Technology, Bachelor of Engineering, 1982
    * Department of Electronics, Graduate School of Engineering, Kyushu Institute of Technology, Master of Engineering, 1984

Academic Degree
    * Doctor of Engineering (Tokyo Institute of Technology), 1994

Professional Career
    * Research Engineer, Atsugi Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation (NTT), April 1986
    * Senior Research Engineer, LSI Laboratories, Nippon Telegraph and Telephone Corporation (NTT), October 1992
    * Senior Research Engineer, Supervisor, Network Innovation Laboratories, Nippon Telegraph and Telephone Corporation (NTT), July 1998
    * Associate Professor, Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology, April 1999
    * Professor, Faculty of Computer Science and Systems Engineering, Center for Microelectronic Systems, Kyushu Institute of Technology, September 2002
    * Professor, Research Institute of Electrical Communication, Tohoku University, April 2005

Field of Specialization
    * Ultrafast and Ultra-broadband Electronics
    * Integrated Circuits and Systems
    * Information and Communication EngineeringAuthored Publications

Academic Awards
    * Outstanding Paper Award, 1997 IEEE GaAs IC Symposium, November 1998

Publications

Books

[1]       T. Otsuji, “IC technology for future lightwave communication systems,” High Speed Photonic Devices, N. Dagli ed., CRC Press, London, 2006.
[2]       Terahertz Technology, T. Omori spvd., NTS, Tokyo, 2005. (pp. 244-258) in Japanese.
[3]       Handbook on Ultrafast Optoelectronic Technology, T. Kobayashi spvd., SIPEC Corp., Tokyo, 2003. (pp. 579-607.) in Japanese.
[4]       T. Otsuji, “Present and future of compuound semiconductor IC’s,” Compound Semiconductor Integrated Circuits, Tho Vu ed., Selected Topics in Electronics and Systems, Vol. 29, World Scientific Publishing, Singapore, 2003. (pp. 1-25.)
[5]       T. Otsuji and E. Sano, "Ultra-high speed optical fiber communication ICs based on Compound Semiconductor devices," OSA Trends in Optics and Photonics Series (TOPS) Vol. 28, Ultrafast Electronics and Optoelectronics, J.E. Bowers and W.H. Knox, eds, Optical Society of America, Washington, DC, 1999, (pp. 5-12,)
[6]       T. Otsuji, K. Murata, K. Narahara, K. Sano, E. Sano, and K. Yamasaki, “20-40-Gbit/s-Class GaAs MESFET Digital ICs for Future Optical Fiber Communications Systems,” High Speed Circuits for Lightwave Communications, Keh-Chung Wang ed., Selected Topics in Electronics and Systems, Vol. 13, World Scientific Publishing, Singapore, 1999. (pp. 87-123.)

Selected Peer-Reviewed Full-Papers

[1]               T. Otsuji, Y.M. Meziani, M. Hanabe, T. Nishimura, and E. Sano, "Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter," Solid State Electronics, Vol. 51, Iss. 10, pp. 1319-1327, Oct. 2007.
[2]               T. Otsuji, M. Hanabe, T. Nishimura and E. Sano, "A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure,” Optics Express, Vol. 14, Iss. 11, pp. 4815-4825, May 29th, 2006.
[3]               T. Otsuji, Y. Kanamaru, H. Kitamura, M. Matsuoka, and O. Ogawara, “Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors,” IEICE Trans. Electron., Vol. E86-C, No. 10, pp. 1985-1993, Oct. 2003.
[4]               T. Otsuji, “Present and future of compuound semiconductor IC’s,” Int. J. High Speed Electron. Sys., Vol. 13, No. 1, pp. 1-25, Mar. 2003.
[5]               T. Otsuji, S. Nakae, and H. Kitamura, "Numerical Analysis for Resonance Properties of Plasma-Wave Field-Effect Transistors and Their Terahertz Applications to Smart Photonic Network Systems," IEICE Trans. Electron., Vol. E84-C, No. 10, pp. 1470-1476, 2001.
[6]               T. Otsuji, K. Kato, S. Kimura, and T. Nagatsuma, "Wideband high-efficiency optical-to-electrical conversion stimulus probe heads for testing large-signal responses of high-speed electronic devices," IEEE Trans. Microwave Theory and Tech., Vol. 47, No. 5, pp. 525-533, May 1999.
[7]               T. Otsuji, K. Murata, T. Enoki, and Y. Umeda, "An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs" IEEE J. Solid-State Circuits, Vol. 33, No. 9, pp. 1321-1327, Sept. 1998.
[8]               T. Otsuji, K. Murata, K. Narahara, K. Sano, E. Sano, and K. Yamasaki, "20-40-Gbit/s-class GaAs MESFET digital ICs for future optical fiber communications systems" Int'l J. High Speed Electron. Sys., Vol. 9, No. 2, pp. 399-435, Sept. 1998. (invited)
[9]               T. Otsuji, Y. Imai, E. Sano, S. Kimura, S. Yamaguchi, M. Yoneyama, T. Enoki, and Y. Ishii, "40-Gb/s ICs for future lightwave communications systems," IEEE J. Solid State Circuits, Vol. 32, No. 9, pp. 1363-1370, 1997.
[10]           T. Otsuji, M. Yoneyama, K. Murata, and E. Sano, "A super-dynamic flip-flop circuit for broadband applications up to 24 Gb/s utilizing production-level GaAs MESFETs," IEEE J. Solid State Circuits, Vol. 32, No. 9, pp. 1357-1362, 1997.
[11]           T. Otsuji, M. Yaita, T. Nagatsuma, and E. Sano, "10- to 80-Gbit/s, highly extinctive electrooptic pulse pattern generation," IEEE J. Selected Topics in Quantum Electron., Vol. 3, No. 3, pp. 643-649, 1996.
[12]           T. Otsuji, T. Nagatsuma, K. Kato, and M. Yoneyama, "Widely tunable electrooptic pulse-pattern generation and its application to on-wafer large-signal characterization of ultra-high-speed electronic devices," Optical and Quantum Electron. Vol. 28, No. 7, pp. 991-1005, 1996.
[13]           T. Otsuji, "A picosecond-accuracy, 700-MHz range, Si-bipolar time interval counter LSI," IEEE J. Solid State Circuits, Vol. 28, No. 9, pp. 941-947, 1993.
[14]           T. Otsuji and N. Narumi, "A 3-ns range, 8-ps resolution, timing generator LSI utilizing Si bipolar gate array," IEEE J. Solid State Circuits, Vol. 26, No. 5, pp. 806-811, 1991.
[15]           T. Otsuji and N. Narumi, "A 10-ps resolution process-insensitive timing generator IC," IEEE J. Solid State Circuits, Vol. 24, No. 5, pp. 1412-1418, 1989.

Selected  Peer-Reviewed Letters

[1]           T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno and E. Sano, "A grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure metamaterial systems," Applied Physics Letters, vol.89, pp.263502-1-263502-3, Dec 2006.
[2]           Taiichi OTSUJI, Mitsuhiro HANABE, and Osamu OGAWARA, “Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,” Appl. Phys. Lett., Vol. 85, No. 11, pp. 2119-2121, 2004.
[3]           T. Otsuji, N. Sahri, N. Shimizu, T. Nagatsuma, and T. Ishibashi, "A 105-GHz bandwidth optical-to-electrical conversion stimulus probe head employing a uni-traveling carrier photodiode," IEEE Photon. Tech. Lett., Vol. 11, No. 8, pp. 1033-1035, 1999.
[4]           T. Otsuji, K. Murata, T. Enoki, and Y. Umeda, "An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs" IEE Electron. Lett. Vol. 34, No. 1, pp. 113-114, 1998.
[5]           T. Otsuji, M. Yoneyama, Y. Imai, T. Enoki, and Y. Umeda, "A 64-Gbit/s 2:1 multiplexer IC using InAlAs/InGaAs/InP HEMTs," IEE Electron. Lett. Vol. 33, No. 17, pp. 1488-1489, 1997.
[6]           T. Otsuji, M. Yoneyama, Y. Imai, T. Enoki, and Y. Umeda, "A 40-Gbit/s, fully-integrated 1:2 demultiplexer IC using InAlAs/InGaAs/InP HEMTs," IEE Electron. Lett. Vol. 33, No. 16, pp. 1409-1410, 1997.
[7]           T. Otsuji, M. Yoneyama, K. Murata, Y. Imai, T. Enoki, and Y. Umeda, "A 2-46.5-GHz quasi-static frequency divider IC using InAlAs/InGaAs/InP HEMTs," IEE Electron. Lett. Vol. 33, No. 16, pp. 1376-1377, 1997.
[8]           T. Otsuji, K. Murata, M. Tokumitsu, and S. Sugitani, "32 Gbit/s super-dynamic decision IC using 0.13 mm GaAs MESFETs with mutilayer-interconnection structure," IEE Electron. Lett., Vol. 33, No. 6, pp. 480-482, 1997.
[9]           T. Otsuji, M. Yaita, T. Nagatsuma, and E. Sano, "10- to 80-Gb/s, highly extinctive electrooptic pulse pattern generation," in Ultrafast Phenomena X, Springer Series in Chemical Physics 62, P.F. Barbara, J. G. Fujimoto, W.H. Knox, and W. Zinth Eds., p. 28, Springer-Verlag, Berlin Heidelberg, 1996.
[10]      T. Otsuji, M. Yoneyama, Y. Imai, S. Yamaguchi, T. Enoki, Y. Umeda, and E. Sano, "46 Gbit/s multiplexer and 40 Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs," IEE Electron. Lett., Vol. 32, No. 7, pp. 685-686, 1996.
[11]      T. Otsuji, K. Kato, and T. Nagatsuma, "50-GHz bandwidth, 0.75-A/W, optoelectronic stimulus probe head employing multimode waveguide p-i-n photodiode," IEEE Photon. Tech. Lett., Vol. 8, No. 3, pp. 411-413, 1996.

Selected  Peer-Reviewed Conference Proceedings

[1]      T. Otsuji, T. Suemitsu, Y.M. Meziani, E. Sano, "Terahertz emission from high electron mobility transistors stimulated by photo-induced plasmon instability," Virtual Conf. on Nanoscale Science and Technology (VC-NST) Abstract, p. 3, Fayetteville, AR, Oct. 23, 2007. (invited)
[2]      T. Otsuji, Y.M. Meziani, T. Suemitsu, M. Hanabe, E. Sano, "Terahertz Emission from 2-dimensional plasmons in HEMT's stimulated by optical signals," Proc. Int. Symp. on Compound Semiconductors (ISCS), TuBIII-6, p. 144, Kyoto, Oct. 15, 2007. (invited)
[3]      T. Otsuji, Y.M. Meziani, M. Hanabe, T. Nishimura, E. Sano, "Room temperature terahertz emission from plasmonresonant high-electron mobility transistors stimulated by optical signals," Proc. SPIE, Vol. 6772, 677220M, pp. 1-7, 2, Sept. 11, Boston, 2007. (invited)
[4]      T. Otsuji, "Stimulated emission of terahertz radiation from a plasmon-resonant photomixer fabricated with GaAs-based heterostructure material systems," 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) Abstract book, pp. 387-392, Venice, Italy, May 23rd, 2007. (invited)
[5]      T. Otsuji, "Terahertz Emission from High-Electron Mobility Transistors Stimulated by Optical Signals," Nano and Giga Challenges in Electronics and Photonics, p. 162, Phoenix, Arizona, March 12-16, 2007. (invited)
[6]      T. Otsuji, M. Hanabe, Y. M. Meziani and E. Sano, "Terahertz emission of radiation from InGaP/InGaAs/GaAs grating bi-coupled plasmon-resonant photomixer,” Dig. the 64th Device Research Conference, pp. 193-194, Pennsylvania PA, June 27th, 2006.
[7]      T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno and E. Sano, "A grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure metamaterial systems,” Proc. OSA International Topical Meeting on Photonic Metamaterials, No. WD-29, Grand Bahama Islands, The Bahamas, June 7th, 2006.
[8]      T. Otsuji, M. Hanabe, T. Nishimura, N. Imamura, E. Sano, and V. Ryzhii, “Widely-Tunable Terahertz Plasmon-Resonant Photomixer Based on Heterostructure Integrated Microelectronics,” in Abstracts of the 35th Workshop on Physics and Technology of THz Photonics, ISSSP, p. 5, Erice, Italy, 20-26 July 2005.
[9]      T. Otsuji, S. Takahashi, N. Hamasuna, T. Takada, and Y. Matsuoka, “A 40-Gbit/s-class Universal Logic Interfacer IP Using GaAs HBT’s for Heterogeneous Logic/Device Systems in Package,” Tech. Dig. 2004 IEEE Compound Semiconductor IC Symposium, pp. 251-254, Monterey, CA, Oct. 24-27, 2004.
[10]  T. Otsuji, “Plasma-Wave Transistors and their Possible Terahertz Applications,” Abstract of the 1st International Conference on Submillimeter Science and Technology, p. 32, Ahmedabad, India, Oct. 13-15, 2004. (invited)
[11]  Taiichi OTSUJI, Mitsuhiro HANABE, Junichi SHIGENOBU, Seigo TAKAHASHI, and Eiichi SANO, “A novel terahertz plasma-wave photomixer with resonant-cavity enhanced structure,”  IEEE, Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Karsruhe, pp. 331-332, Karsruhe, Sept. 2004.
[12]  T. Otsuji, M. Hanabe, and O. Ogawara, “THz Plasma-Wave Resonance of Two-Dimensional Electrons in InGaP/InGaAs HEMT’s,” in Tech. Dig. 11th IEEE International Conference on Terahertz Electronics, p. 39, Sendai, Sept. 24-27, 2003.
[13]  T. Otsuji, Y. Kanamaru, H. Kitamura, M. Matsuoka, and O. Ogawara, “Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors,” in Dig. Topical Workshop on Heterostructure Microelectronics, pp. 80-81, Okinawa, Japan, Jan. 2003.
[14]  T. Otsuji, "Plasma-Wave Transistors and their Possible Terahertz Applications," in Dig. 2001 Asis-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (2001AWAD), pp. 71-77, Cheju, Korea, July 2001. (invited)
[15]  T. Otsuji, Y. Kanamaru, H. Kitamura, and S. Nakae, "Terahertz Plasma-Wave Excitation in 80-nm Gate-Length GaAs MESFET by Photomixing Long- Wavelength CW Laser Sources," in Dig. 59th Annual Device Research Conference, pp. 97-98, Notre Dame, IN, June. 2001.
[16]  T. Otsuji, "Mixed Signal Issues for 40-Gbit/s Class InP-based Multiplexer/Demultiplexer IC's," in Dig. IEEE Int. Microwave Symp. Workshop WMC, WMC-3, Phoenix, AZ, May 2001.
[17]  T. Otsuji, "Present and Future of High-Speed Electronic Devices and IC's," in Dig. Microwave Workshops and Exibition (MWE2000), WS10-1, pp. 237- 242, Yokohama, Dec. 2000. (invited)
[18]  T. Otsuji, Shin Nakae, and Hajime Kitamura, "Plasma-wave transistors with virtual carrier excitation using polariton-plasmon coupling for terahertz applications," in Dig. Topical Workshop on Heterostructure Microelectronics, pp. 58-59, Kyoto, Japan, Aug. 2000.
[19]  T. Otsuji, E. Sano, and Y. Ishii, "InP microelectronics for high bit rate transmissions," in Proc. European Conference on Optical Communication (ECOC'99), Vol. II, pp. 154-157 , Nice, France, Sept. 1999. (invited)
[20]  T. Otsuji and E. Sano, "Ultra-high speed optical fiber communication ICs based on Compound Semiconductor devices," in Tech. Dig. OSA Int'l Topical Meeting on Ultrafast Electronics and Optoelectronics, pp. 87-89, Aspen, CO, 1999. (invited)
[21]  T. Otsuji, "40-Gbit/s InP-based HEMT IC technology for future lightwave communication systems," in 56th Annual Device Research Conf. Dig., pp. 4-5, Charlottesville, VA, 1998. (invited)
[22]  T. Otsuji, K. Murata, T. Enoki, and Y. Umeda, "An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs," in Tech. Dig. 1997 IEEE GaAs IC Symp., pp. 183-186, Anaheim, CA, 1997.
[23]  T. Otsuji, M. Yoneyama, K. Murata, and E. Sano, "A super-dynamic flip-flop circuit for broadband applications up to 24 Gbit/s utilizing production-level GaAs MESFETs," in Tech. Dig. 1996 IEEE GaAs IC Symp., pp. 145-148, Orlando, FL, 1996.
[24]  T. Otsuji, Y. Imai, E. Sano, S. Kimura, S. Yamaguchi, M. Yoneyama, T. Enoki, and Y. Ishii, "40-Gbit/s ICs for future lightwave communications systems," in Tech. Dig. 1996 IEEE GaAs IC Symp., pp. 14-17, Orlando, FL, 1996. (invited)
[25]  T. Otsuji, M. Yaita, T. Nagatsuma, and E. Sano, "10- to 80-Gb/s, highly extinctive electrooptic pulse pattern generation," in Tech. Dig. 10th International Conf. on Ultrafast Phenomena, pp. 311-312, San Diego, CA, 1996.
[26]  T. Otsuji, Y. Imai, and E. Sano, "Lightwave communication ICs beyond 10 Gb/s -design and measurement challenges," in Tech. Dig. IEEE Microwave Millimeter-Wave Monolithic Circuits Symp., pp. 11-15, Orlando, FL, 1995. (invited)
[27]  T. Otsuji, K. Kato, T. Nagatsuma, and M. Yoneyama, "10- to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultra-high-speed electronic devices," in Proc. 1994 IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting, Vol. 2, pp. 203-204, Boston, MA, 1994. (invited)
[28]  T. Otsuji, "A picosecond accuracy timing error compensation technique in TDR measurement," in Proc. International Test Conf., pp. 969-975, Nashvil, TN, 1991.

International Patents

[1]       T. Otsuji and T. Shimizu, "Method and apparatus for measuring the length of a transmission line in accordance with a reflected waveform," US Pat. No. 5321632, June 14, 1994.
[2]       T. Otsuji and N. Narumi, "Timing signal delay equipment," US Pat. No. 4939677, Jul. 3, 1990, Korean Pat. No. 41471, April 30, 1991.
[3]       T. Otsuji and N. Narumi, "IC test system," US Pat. No. 4928278, May 22, 1990.